收藏本站
NTHS5443
Power MOSFET
?20 V, ?4.9 A, P?Channel ChipFET t
Features
?
?
?
?
Low R DS(on) for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
Pb?Free Package is Available
V (BR)DSS
http://onsemi.com
R DS(on) TYP
I D MAX
Applications
? Power Management in Portable and Battery?Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
?20 V
G
56 m W @ ?4.5
S
?4.9 A
Steady
Rating
Symbol
5 secs
State
Unit
Drain?Source Voltage
Gate?Source Voltage
V DS
V GS
?20
" 12
V
V
D
P?Channel MOSFET
Continuous Drain Current
(T J = 150 ° C) (Note 1)
T A = 25 ° C
T A = 85 ° C
Pulsed Drain Current
Continuous Source Current (Note 1)
Maximum Power Dissipation (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
I DM
I S
P D
?4.9
?3.5
?4.9
2.5
1.3
" 15
?3.6
?2.6
?3.6
1.3
0.7
A
A
A
W
8
1
PIN
CONNECTIONS
ChipFET
CASE 1206A
STYLE 1
MARKING
DIAGRAM
Operating Junction and Storage
T J , T stg
?55 to +150
° C
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
D 8
D 7
D 6
S 5
1 D
2 D
3 D
4 G
1
2
3
4
8
7
6
5
[1 oz] including traces).
A4 = Specific Device Code
M = Month Code
G
= Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTHS5443T1
NTHS5443T1G
Package
ChipFET
ChipFET
(Pb?Free)
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
July, 2005 ? Rev. 6
1
Publication Order Number:
NTHS5443T1/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTJD1155LT1 MOSFET/LOAD SWITCH HI 8V SOT-363
NTJD2152PT4G MOSFET P-CH 8V DUAL ESD SOT-363
NTJD4001NT2G MOSFET N-CH DUAL 30V SOT-363
NTJD4105CT2G MOSFET N/P-CHAN COMPL SOT-363
NTJD4152PT1 MOSFET P-CHAN DUAL 20V SOT-363
NTJD4158CT1G MOSFET N/P-CHAN COMPL SOT-363
NTJD4401NT1G MOSFET 2N-CH 20V 630MA SOT-363
NTJD5121NT2G MOSFET N-CH 60V DUAL ESD SOT363
相关代理商/技术参数
NTHS5443T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET P-Channel ChipFET?
NTHS5443T1G 功能描述:MOSFET -20V -4.9A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTHS5445T1 功能描述:MOSFET P-CH 8V 5.2A CHIPFET RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTHS5445T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET P-Channel ChipFET?
NTHS75680RJ 制造商:MACOM 制造商全称:Tyco Electronics 功能描述:Aluminium Housed Power Resistors
NTI02B0N1TRF 制造商:NIC Components Corp 功能描述:- Tape and Reel
NTI02B0N2TRF 制造商:NIC Components Corp 功能描述:- Tape and Reel
NTI02B0N3TRF 制造商:NIC Components Corp 功能描述:- Tape and Reel